advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 35v fast switching characteristic r ds(on) 6.6m rohs compliant i d 16a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without notice parameter total power dissipation 2.5 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 60 rohs-compliant product thermal data parameter drain-source voltage gate-source voltage continuous drain current 3 0.02 storage temperature range continuous drain current 3 12.8 pulsed drain current 1 200811032 1 AP4427GM rating 35 + 20 16 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the so-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. s s s g d d d d so-8 g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 35 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.03 - v/ : r ds(on) static drain-source on-resistance 2 v gs =10v, i d =7.5a - - 6.6 m ? ? ?
AP4427GM fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 4 6 8 10 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d = 7.5 a t a =25 : 0 10 20 30 40 50 60 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 10 20 30 40 50 60 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0.4 0.9 1.4 1.9 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = 7.5 a v g =10v 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0 2 4 6 8 10 12 14 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 AP4427GM q v g 4.5v q gs q gd q g charge 0 4 8 12 16 0 20406080 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =16v v ds =20v v ds =24v i d = 7.5 a 100 1000 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =125 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 20 40 60 80 100 120 02468 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v
millimeters symbols min nom max a 1.35 1.55 1.75 a1 0.10 0.18 0.25 b 0.33 0.41 0.51 c 0.19 0.22 0.25 d 4.80 4.90 5.00 e 5.80 6.15 6.50 e1 3.80 3.90 4.00 e g l 0.38 0.90 0.00 4.00 8.00 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : so-8 1.27 typ 0.254 typ package outline : so-8 advanced power electronics corp. e b 1 34 5 6 7 8 2 d e1 a1 a g part number 4427 g m ywwsss package code date code (ywwsss) y last digit of the year ww week sss sequence e meet rohs requirement
|
